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Samsung

Flash Memory Summit Lifetime Achievement Award

The Flash Memory Summit is proud to announce this year’s Lifetime Achievement Award honoree.

This award is presented annually at the Flash Memory Summit to individuals who have shown outstanding leadership in promoting the development and use of flash memory and associated or related technologies.

The award recognizes achievements in such areas as:

  • Leadership of a major flash company or business effort,
  • Creating or promoting an important flash technology, a flash-related technology, or a technology to supersede flash,
  • Bringing flash technology to a new and important application.

The conference organizers hope that the recognition this award brings will help foster further advances in the fastest-growing technology of the semiconductor industry.

  • Kinam Kim2016: Dr. Kinam Kim, for leadership, strategic direction and inventions that led to many Flash "firsts" including historic advancements in 3D NAND and high density storage."  » Read More









    award

    Lifetime Achievement Award Committee members Brian Berg (left) and Jim Handy (right) with Samsung's Dr. Kinam Kim

  • Bob Norman2015: Robert "Bob" Norman, for being the key System Architect of "System-Flash" in 1989. System-Flash uses a processor and firmware to manage the flash cells using techniques including wear leveling, error correction, low-stress write/erase and the Flash Translation Layer to make SSDs plug-compatible replacements for disk drives.  » Read More







  • Simon Sze2014: Dr. Simon Sze, for co-inventing the floating gate in 1967. Working at Bell Labs, Drs. Sze and Dawon Kahng invented a silicon device that insulated a charge which could represent a non-volatile memory bit. This was the basis of Intel's EPROM, and later the EEPROM and the Flash EEPROM.  








  • Fujio Masuoka2013: Dr. Fujio Masuoka, for the conception of flash memory in 1984. Flash Memory was a new type of EEPROM device which required only a single transistor to store data, and whose name was based on an architecture which allowed erasure of an entire memory chip in a single operation - or in a "flash."  







  • Eli Harari2012: Dr. Eli Harari, for creating a practical and reliable floating gate, and for inventions enabling data storage in flash memory. Harari discovered the thin silicon dioxide necessary for a reliable floating gate EEPROM (1976-78), and this was essential for flash memory as well. He also invented MLC flash, as well an architecture suitable for data storage in flash (1988).  







  • 2011: Intel’s Flash Memory Team (Dr. Richard Pashley, Dr. Steffan Lai, Bruce McCormick and Niles Kynett), for bringing to market ETOX NOR in 1988. This was first successful flash memory product, and its later generations became a multi-billion dollar business in the 1990s.  

 
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